| Frequency (GHz) |
1.805~2.2GHz |
| VCC (Min) (V) |
1.5 |
| VCC (Max) (V) |
3.3 |
| Gain(dB) |
13.5 |
| NF(dB) |
0.9 |
| Icc (mA) |
8 |
| Temperature |
-40℃~85℃ |
| P1dB (dBm) |
-4.5 |
| Package (mm) |
FCDFN 1.1X0.7-6L |
1.Operating frequency 1805MHz to 2200MHz
2.Noise figure(NF) =0.9dB
3.High power gain =13.5dB
4.Insertion Loss in bypass mode =3dB
5.Gain mode IIP3ib=+7dBm
6.Gain mode input 1dB-compression point=-1.2dBm
7.Bypass mode input 1dB-compression point= +4dBm
8.Supply voltage: 1.5V to 3.3V
9.Gain mode current 8.0mA
10.Bypass mode current <1uA
11.Input and output DC decoupled
12.Requires only one input matching inductor
13.Integrated matching for the output
14.FCDFN 1.1mmX0.7mmX0.37mm -6L package
15.2kV HBM ESD protection (including RFIN and RFOUT pin)
The AW15208MFDR is a Low Noise Amplifier with bypass designed for LTE receiver applications. The AW15208MFDR requires only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution.
The AW15208MFDR achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.5V up to 3.3V. All these features make AW15208MFDR an excellent choice for LTE LNA as it improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces the overall cost.
The AW15208MFDR is available in a small lead-free, RoHS-Compliant, FCDFN 1.1mmX0.7mmX0.37 mm -6L package.
